IWCE-5 Journal Contributions (1997)
Publication list for
Publications in Scientific Journals
(all records with "VLSI" anywhere in the record)
1998 - 1998
92 records
Publications in Scientific Journals
- R. Akis, D.K. Ferry:
"Wave Function Scarring Effects in Open Ballistic Quantum Cavities";
VLSI Design, 8 (1998), 307 - 312.
- L. Albasha, C.M. Snowden, R.D. Pollard:
"A New HEMT Breakdown Model Incorporating Gate and Thermal Effects";
VLSI Design, 8 (1998), 349 - 353.
- A.M. Anile, V. Romano, G. Russo:
"Hyperbolic Hydrodynamical Model of Carrier Transport in Semiconductors";
VLSI Design, 8 (1998), 521 - 525.
- C.R. Arokianathan, J.H. Davies, A. Asenov:
"Ab-Initio Coulomb Scattering in Atomistic Device Simulation";
VLSI Design, 8 (1998), 331 - 335.
- A. Asenov, S. Babiker, S.P. Beaumont, J.R. Barker:
"Monte Carlo Calibrated Drift-Diffusion Simulation of Short Channel HFETs";
VLSI Design, 8 (1998), 319 - 323.
- S. Babiker, A. Asenov, N. Cameron, S.P. Beaumont, J.R. Barker:
"Complete RF Analysis of Compound FETs Based on Transient Monte Carlo Simulation";
VLSI Design, 8 (1998), 313 - 317.
- K. Banoo, F. Assad, M.S. Lundstrom:
"Formulation of the Boltzmann Equation as a Multi-Mode Drift-Diffusion Equation";
VLSI Design, 8 (1998), 539 - 544.
- S. Bennett, C.M. Snowden, S. Iezekiel:
"Rate Equation Modeling of Nonlinear Dynamics in Directly Modulated Multiple Quantum Well Laser Diodes";
VLSI Design, 8 (1998), 355 - 360.
- E.J. Brauer, M. Turowski, J.M. McDonough:
"Additive Decomposition Applied to the Semiconductor Drift-Diffusion Model";
VLSI Design, 8 (1998), 393 - 399.
- A. R. Brown, A. Asenov, J.R. Barker:
"3D Parallel Finite Element Simulation of In-Cell Breakdown in Lateral-Channel IGBTs";
VLSI Design, 8 (1998), 99 - 103.
- J.D. Bude:
"Monte Carlo Simulations of Impact Ionization Feedback in MOSFET Structures";
VLSI Design, 8 (1998), 13 - 19.
- F.M. Bufler, P. Graf, B. Meinerzhagen:
"High-Field Hole Transport in Strained Si and SiGe by Monte Carlo Simulation: Full Band versus Analytic Band Models";
VLSI Design, 8 (1998), 41 - 45.
- F.A. Buot:
"An lnterband Tunnel Oscillator: Intrinsic Bistability and Hysteresis of Trapped Hole Charge in a Double-Barrier Structure";
VLSI Design, 8 (1998), 237 - 245.
- F.A. Buot:
"Quantum Distribution-Function Transport Equations in Non-Normal Systems and in Ultra-Fast Dynamics of Optically-Excited Semiconductors";
VLSI Design, 8 (1998), 265 - 273.
- C. Cercignani, I.M. Gamba, J.W. Jerome, C.-W. Shu:
"Applicability of the High Field Model: A Preliminary Numerical Study";
VLSI Design, 8 (1998), 275 - 282.
- C. Cercignani, I.M. Gamba, J.W. Jerome, C.-W. Shu:
"Applicability of the High Field Model: An Analytical Study Via Asymptotic Parameters Defining Domain Decomposition";
VLSI Design, 8 (1998), 135 - 141.
- C.-H. Chang, C.-K. Lin, N. Goldsman, I.D. Mayergoyz:
"Spherical Harmonic Modeling of a 0.05μm Base BJT: A Comparison with Monte Carlo and Asymptotic Analysis";
VLSI Design, 8 (1998), 147 - 151.
- E.A.B Cole, T. Boettcher, C.M. Snowden:
"Two-Dimensional Modeling of HEMTs Using Multigrids with Quantum Correction";
VLSI Design, 8 (1998), 29 - 34.
- M. Dür, S.M. Goodnick, M. Reigrotzki, R. Redmer:
"Monte Carlo Simulations of High Field Transport in Electroluminescent Devices";
VLSI Design, 8 (1998), 401 - 405.
- B. Eisenberg:
"Ionic Channels in Biological Membranes: Natural Nanotubes Described by the Drift-Diffusion Equations";
VLSI Design, 8 (1998), 75 - 78.
- T. Ezaki, N. Mori, C. Hamaguchi:
"Electron-LA Phonon Interaction in a Quantum Dot";
VLSI Design, 8 (1998), 225 - 230.
- P. Falsaperla, M. Trovato:
"A Hydrodynamic Model for Transport in Semiconductors without Free Parameters";
VLSI Design, 8 (1998), 527 - 532.
- G. Fang, T.-W. Tang:
"Simulation of Bistable Laser Diodes with lnhomogeneous Excitation";
VLSI Design, 8 (1998), 283 - 287.
- D.K. Ferry, J.R. Barker:
"Open Problems in Quantum Simulation in Ultra-Submicron Devices";
VLSI Design, 8 (1998), 165 - 172.
- M.V. Fischetti:
"Theory of Electron Transport in Small Semiconductor Devices Using the Pauli Master Equation";
VLSI Design, 8 (1998), 173 - 178.
- F. Gamiz, J.B. Roldan, J.A. Lopez-Villanueva:
"A β-SiC MOSFET Monte Carlo Simulator Including Inversion Layer Quantization";
VLSI Design, 8 (1998), 257 - 260.
- F. Gamiz, J.B. Roldan, J.A. Lopez-Villanueva:
"Monte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si1 - xGex Heterostructures";
VLSI Design, 8 (1998), 253 - 256.
- C.L. Gardner, C. Ringhofer:
"Smooth Quantum Hydrodynamic Model Simulation of the Resonant Tunneling Diode";
VLSI Design, 8 (1998), 143 - 146.
- A. Greiner, L. Varani, L. Reggiani, M.C. Vecchi, T. Kuhn, P. Golinelli:
"Carrier Thermal Conductivity: Analysis and Application to Submicron-Device Simulation";
VLSI Design, 8 (1998), 59 - 64.
- H.L. Grubin, J.R. Caspar, D.K. Ferry:
"Phase Space Boundary Conditions and Quantum Device Transport";
VLSI Design, 8 (1998), 215 - 217.
- P. Hasler, A.G. Andreou, C. Diorio, B.A. Minch, C.A. Mead:
"Impact Ionization and Hot-Electron Injection Derived Consistently from Boltzmann Transport";
VLSI Design, 8 (1998), 454 - 461.
- P. Hyldgaard, H.K. Harbury, W. Porod:
"Electrostatic Formation of Coupled Si/SiO2 Quantum Dot Systems";
VLSI Design, 8 (1998), 555 - 558.
- G. Iannaccone, M. Macucci, B. Pellegrini:
"Modeling of Shot Noise in Resonant Tunneling Structures";
VLSI Design, 8 (1998), 449 - 453.
- S.M. Imtiaz, S.M. El-Ghazaly, R.O. Grondin:
"Advantages of Semiconductor Device Simulator Combining Electromagnetic and Electron Transport Models";
VLSI Design, 8 (1998), 495 - 500.
- C. Jacoboni, A. Abramo, P. Bordone, R. Brunetti, M. Pascoli:
"Application of the Wigner-Function Formulation to Mesoscopic Systems in Presence of Electron-Phonon Interaction";
VLSI Design, 8 (1998), 185 - 190.
- J. Jakumeit, A. Duncan, U. Ravaioli, K. Hess:
"Simulation of Si-MOSFETs with the Mutation Operator Monte Carlo Method";
VLSI Design, 8 (1998), 343 - 347.
- Z.-L. Ji, D.W.L. Sprung:
"Electron Transport In One-Dimensional Magnetic Superlattices";
VLSI Design, 8 (1998), 559 - 565.
- Y.S. Joe, R.M. Cosby:
"Resonances in Conductance through Tunable Attractors";
VLSI Design, 8 (1998), 295 - 299.
- E.C. Kan, R.W. Dutton:
"Modeling of Poly-Silicon Carrier Transport with Explicit Treatment of Grains and Grain Boundaries";
VLSI Design, 8 (1998), 533 - 537.
- R.W. Kelsall:
"Monte Carlo Simulations of Intersubband Hole Relaxation in a GaAs/AlAs Quantum Well";
VLSI Design, 8 (1998), 367 - 373.
- R.W. Kelsall, A.J. Lidsey:
"Inclusion of Quantum Confinement Effects in Self-Consistent Monte Carlo Device Simulations";
VLSI Design, 8 (1998), 21 - 27.
- M. Kemp, V. Mujica, A. Roitberg, M.A. Ratner:
"Molecular Wire Interconnects: Chemical Structural Control, Resonant Tunneling and Length Dependence";
VLSI Design, 8 (1998), 65 - 74.
- B. Klein, L.F. Register, K. Hess, D. Deppe:
"Theory and Modeling of Lasing Modes in Vertical Cavity Surface Emitting Lasers";
VLSI Design, 8 (1998), 87 - 91.
- G. Klimeck, D. Blanks, R. Lake, R.C. Bowen, C.L. Fernando, M. Leng, W.R. Frensley, D. Jovanovic, P. Sotirelis:
"Writing Research Software in a Large Group for the NEMO Project";
VLSI Design, 8 (1998), 79 - 86.
- V.A. Kochelap, B.A. Glavin, V.V. Mitin:
"Transverse Patterns in the Bistable Resonant Tunneling Systems under Ballistic Lateral Transport";
VLSI Design, 8 (1998), 481 - 487.
- H. Kosina, C. Troger:
"SPIN - A Schrödinger-Poisson Solver Including Non-Parabolic Bands";
VLSI Design, 8 (1998), 489 - 493.
- P.G. Krause, R.M. Mueller, P.D. Tougaw, J.M. Weidner:
"An Alternative Geometry for Quantum Cellular Automata";
VLSI Design, 8 (1998), 549 - 553.
- A. Kuprat, D. Cartwright, J.T. Gammel, D. George, B. Kendrick, D. Kilcrease, H. Trease, R. Walker:
"X3D Moving Grid Methods for Semiconductor Applications";
VLSI Design, 8 (1998), 117 - 121.
- G.-C. Liang, Y.A. Lin, D. Z.-Y. Ting, Y.-C. Chang:
"Multiband Quantum Transmitting Boundary Method for Non-Orthogonal Basis";
VLSI Design, 8 (1998), 507 - 513.
- I.-S. Lim, R.O. Grondin, S.M. El-Ghazaly:
"Ensemble Monte Carlo and Full-Wave Electrodynamic Models Implemented Self-Consistently on a Parallel Processor Using Perfectly Matched Layer Boundary Conditions";
VLSI Design, 8 (1998), 129 - 133.
- J.-F. Lin, D. Z.-Y. Ting:
"Quantum Transport and Thermoelectric Properties of InAs/GaSb Superlattices";
VLSI Design, 8 (1998), 501 - 505.
- M. Macucci, A.T. Galick, U. Ravaioli:
"Tunneling between Multimode Stacked Quantum Wires";
VLSI Design, 8 (1998), 247 - 252.
- M. Macucci, K. Hess:
"Shell-Filling Effects in Circular Quantum Dots";
VLSI Design, 8 (1998), 443 - 447.
- G. Mahler, R. Wawer:
"Quantum Networks: Dynamics of Open Nanostructures";
VLSI Design, 8 (1998), 191 - 196.
- A. Marrocco, P. Montarnal:
"Bi-Dimensional Simulation of the Simplified Hydrodynamic and Energy-Transport Models Heter Junction Semiconductors Devices Using Mixed Finite Elements";
VLSI Design, 8 (1998), 375 - 379.
- O. Muscato, S. Rinaudo, P. Falsaperla:
"Calibration of a One Dimensional Hydrodynamic Simulator with Monte Carlo Data";
VLSI Design, 8 (1998), 515 - 520.
- A. Nakano, R.K. Kalia, P. Vashishta:
"Multilevel Algorithms for Large-Scope Molecular Dynamics Simulations of Nanostructures on Parallel Computers";
VLSI Design, 8 (1998), 123 - 128.
- B. Neinhüs, S. Decker, P. Graf, F.M. Bufler, B. Meinerzhagen:
"Consistent Hydrodynamic and Monte-Carlo Simulation of SiGe HBTs Based on Table Models the Relaxation Times";
VLSI Design, 8 (1998), 387 - 391.
- M.S. Obrecht, E.L. Heasell, J. Vlach, M.I. Elmasry:
"Transient Phenomena in High Speed Bipolar Devices";
VLSI Design, 8 (1998), 475 - 480.
- T. Okada, K. Horio:
"Study on Possible Double Peaks in Cutoff Frequency Characteristics of AlGaAs/GaAs HBTs by Energy Transport Simulation";
VLSI Design, 8 (1998), 437 - 442.
- F. Oyafuso, P. von Allmen, M. Grupen, K. Hess:
"Inclusion of Bandstructure and Many-Body Effects in a Quantum Well Laser Simulator";
VLSI Design, 8 (1998), 463 - 468.
- J.W. Parks Jr., K.F. Brennan:
"Boundary Condition for the Modeling of Open-Circuited Devices in Non-Equilibrium";
VLSI Design, 8 (1998), 567 - 572.
- J.W. Parks Jr., K.F. Brennan, A.W. Smith:
"Numerical Examination of Photon Recycling as an Explanation of Observed Carrier Lifetime in Direct Bandgap Materials";
VLSI Design, 8 (1998), 153 - 157.
- M.B. Patil, U. Ravaioli, T. Kerkhoven:
"Numerical Evaluation of Iterative Schemes for Drift-Diffusion Simulation";
VLSI Design, 8 (1998), 337 - 341.
- M. Peskin, C. Maziar:
"MOMENTS: The Modular Monte Carlo Environment for Charge Transport Simulation, Overview and Applications";
VLSI Design, 8 (1998), 35 - 40.
- A.J. Piazza, C.E. Korman:
"Semiconductor Device Noise Computation Based on the Deterministic Solution of the Poisson and Boltzmann Transport Equations";
VLSI Design, 8 (1998), 381 - 385.
- W. Pötz, X. Hu:
"Coherent Control of Light Absorption and Carrier Dynamics in Semiconductor Nanostructures";
VLSI Design, 8 (1998), 203 - 207.
- W. Porod:
"Guest Editorial";
VLSI Design, 8 (1998), xiii - xiii.
- S. Ramey, R. Khoie:
"Formulation of a Self-Consistent Model for Quantum Well pin Solar Cells: Dark Behavior";
VLSI Design, 8 (1998), 419 - 422.
- A. Reale, A. Di Carlo, S. Pescetelli, M. Paciotti, P. Lugli:
"Optical and Electronic Properties of Semiconductor 2D Nanosystems: Self-Consistent Tight-Binding Calculations";
VLSI Design, 8 (1998), 469 - 473.
- S. Reggiani, M.C. Vecchi, M. Rudan:
"Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analyzed through a Full-Band, Spherical-Harmonics Solution of the BTE";
VLSI Design, 8 (1998), 361 - 365.
- K.A. Remley, A. Weisshaar, V.K. Tripathi, S.M. Goodnick:
"Modeling of Radiation Fields in a Sub-Picosecond Photo-Conducting System";
VLSI Design, 8 (1998), 407 - 412.
- D.A. Richie, P. von Allmen, K. Hess, R.M. Martin:
"Electronic Structure Calculations Using an Adaptive Wavelet Basis";
VLSI Design, 8 (1998), 159 - 163.
- J.B. Roldan, F. Gamiz, J.A. Lopez-Villanueva:
"Development of a Method for Determining the Dependence of the Electron Mobility on the Longitudinal-Electric Field in MOSFETs";
VLSI Design, 8 (1998), 261 - 264.
- F. Rossi, S. Ragazzi, A. Di Carlo, P. Lugli:
"A Generalized Monte Carlo Approach for the Analysis of Quantum-Transport Phenomena in Mesoscopic Systems: Interplay Between Coherence and Relaxation";
VLSI Design, 8 (1998), 197 - 202.
- S. Roy, A. Asenov, S. Babiker, J.R. Barker, S.P. Beaumont:
"RF Performance of Si/SiGe MODFETs: A Simulation Study";
VLSI Design, 8 (1998), 325 - 330.
- M. Saraniti, G. Zandler, G. Formicone, S. Goodnick:
"Cellular Automata Studies of Vertical Silicon Devices";
VLSI Design, 8 (1998), 111 - 115.
- A. Scholze, A. Wettstein, A. Schenk, W. Fichtner:
"Self-Consistent Calculations of the Ground State and the Capacitance of a 3D Si/SiO2 Quantum Dot";
VLSI Design, 8 (1998), 231 - 235.
- W.-K. Shih, S. Jallepalli, M. Rashed, C.M. Maziar, A.F. Tasch Jr.:
"Study of Electron Velocity Overshoot in n-MOS Inversion Layers";
VLSI Design, 8 (1998), 429 - 435.
- C.M. Snowden:
"Modeling of Thermal Effects in Semiconductor Structures";
VLSI Design, 8 (1998), 53 - 58.
- J.P. Stanley, N. Goldsman:
"New "Irreducible Wedge" for Scattering Rate Calculations in Full-Zone Monte Carlo Simulations";
VLSI Design, 8 (1998), 413 - 417.
- J.P. Sun, H.B. Teng, G.I. Haddad, M.A. Stroscio, G.J. Iafrate:
"lntersubband Relaxation in Step Quantum Well Structures";
VLSI Design, 8 (1998), 289 - 293.
- S.-I. Takagi:
"Two-Dimensional Carrier Transport in Si MOSFETs";
VLSI Design, 8 (1998), 1 - 11.
- D. Z.-Y. Ting, E.S. Daniel, T.C. McGill:
"Interface Roughness Effects in Ultra-Thin Tunneling Oxides";
VLSI Design, 8 (1998), 47 - 51.
- A. Trellakis, A.T. Galick, A. Pacelli, U. Ravaioli:
"Comparison of Iteration Schemes for the Solution of the Multidimensional Schrödinger-Poisson Equations";
VLSI Design, 8 (1998), 105 - 109.
- D. Vasileska, W.J. Gross, V. Kafedziski, D.K. Ferry:
"Convergence Properties of the Bi-CGSTAB Method for the Solution of the 3D Poisson and 3D Electron Current Continuity Equations for Scaled Si MOSFETs";
VLSI Design, 8 (1998), 301 - 305.
- G. Veszely:
"A 3D Nonlinear Poisson Solver";
VLSI Design, 8 (1998), 545 - 548.
- M. Wagner:
"A New Computational Approach to Photon-Assisted Tunneling in Intense Driving Fields Based on a Fabry-Perot Analogy";
VLSI Design, 8 (1998), 209 - 214.
- H. Wang, W.-K. Shih, S. Green, S. Hareland, C.M. Maziar, A.F. Tasch Jr.:
"Hydrodynamic (HD) Simulation of n-Channel MOSFETs with a Computationally Efficient Inversion Layer Quantization Model";
VLSI Design, 8 (1998), 423 - 428.
- C. Wasshuber, H. Kosina, S. Selberherr:
"Single-Electron Memories";
VLSI Design, 8 (1998), 219 - 223.
- G. Zandler, R. Oberhuber, D. Liebig, P. Vogl, M. Saraniti, P. Lugli:
"Cellular Automaton Study of Time-Dynamics of Avalanche Breakdown in IMPATT Diodes";
VLSI Design, 8 (1998), 93 - 98.
- I.V. Zozoulenko, K.-F. Berggren:
"Quantum Transport in Open Nanostructures";
VLSI Design, 8 (1998), 179 - 184.