Session 1: Technology CAD
Chairperson: S. Goodnick
| 08:30 | Welcome H. Kosina and S. Selberherr |
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| 08:45 | Calculating Future CMOS and CMOS Future - Where Industry Needs Academia (Invited) T. Skotnicki STMicroelectronics, France |
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| 09:15 | A Novel Approach to Three-Dimensional Semiconductor Process Simulation: Application to Thermal Oxidation V. Suvorov, A. Hössinger, and Z. Djuric Silvaco Technology Center, United Kingdom |
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| 09:30 | A 3D Moving Grid Algorithm for Process Simulation N. Strecker and D. Richards Synopsys Inc., USA |
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| 09:45 | Kinetic-Energy Transport Equation for the Modeling of Ballistic MOSFETs T.-W. Tang and P. Samra University of Massachusetts, Amherst, USA |
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| 10:00 | Multi-Dimensional Semiconductor Tunneling in Density-Gradient Theory M. Ancona Naval Research Laboratory, USA |
