P71	Shot Noise in Transport Through Quantum Dots: Clean versus Disordered Samples F. Aigner, S. Rotter, and J. Burgdörfer TU Vienna, Austria
	P72	Effect of Elastic Processes and Ballistic Recovery in Silicon Nanowire Transistors D. Basu, M. Gilbert, and S. Banerjee University of Texas at Austin, USA
	P73	A Hierarchy of Quantum-classical Transport Models in the Framework of the SDM Method N. Ben Abdallah, A. Domaingo, M. Mouis1, C. Negulescu, and N. Vauchelet Universite Paul Sabatier, France 1IMEP, CNRS, France
	P74	Channel Length Dependence of Tunnel FET Subthreshold Swing K. Bhuwalka, M. Born, M. Schindler, and I. Eisele Universität der Bundeswehr, Germany
	P75	Quantum Corrections to Semiclassical Transport in Nanoscale Devices using Entropy Principles J. Bourgade1, P. Degond2, N. Mauser1, and C. Ringhofer1,3 1University of Vienna, Austria 2Universite Paul Sabatier, France 3Arizona State University, USA
	P76	Micromagnetic Simulation of Current-Driven Domain Wall Propagation G. Csaba, P. Lugli, L. Ji1, and W. Porod1 TU Munich, Germany 1University of Notre Dame, USA
	P77	Shot Noise in Resonant Tunneling Structures Using Non Equilibrium Green's Function Calculation V.-N. Do, P. Dollfus, and V.-L. Nguyen1 Universite Paris Sud, France 1VAST, Vietnam
	P78	Inelastic Cotunneling Through an Interacting Quantum Dot with a Quantum Langevin Equation Approach B. Dong and H.-L. Cui1 Shanghai Jiaotong University, China 1Stevens Institute of Technology, USA
	P79	Quantum Transport Using Parallel Computing Techniques P. Drouvelis1,2, P. Schmelcher1, and P. Bastian2 1University of Heidelberg, Germany 2Interdisziplinäres Zentrum für Wissenschaftliches Rechnen, Germany
	P80	Simulation of a Resonant Tunneling Diode Using an Entropic Quantum Drift-Diffusion Model P. Degond, S. Gallego, and F. Mehats Universite Paul Sabatier, France
	P81	Quantum Transport through Nano-wires with One-sided Surface Roughness J. Feist, A. Bäcker1, R. Ketzmerick1, S. Rotter, B. Huckestein2, and J. Burgdörfer TU Vienna, Austria 1TU Dresden, Germany 2Ruhr University, Bochum
	P82	Electronic Transport Properties of CNT Fibers H. Mehrez and M. Anantram NASA Ames Research Center, USA
	P83	Scattering-dependence of Bias Dependent Magnetization Switching in Ferromagnetic Resonant Tunneling Diode S. Ganguly, A. MacDonald, L. Register, and S. Banerjee University of Texas at Austin, USA
	P84	Numerical Simulations of Propagation of SCWs in Strained Si/SiGe Heterostructure at 4.2 and 77 K A. Garcia, V. Grimalsky and E. Gutierrez1 INAOE, Mexico 1INTEL SRCM, Mexico
	P85	Phonon Exacerbated Quantum Interference Effects in III-V Nanowire Transistors M. Gilbert University of Texas at Austin, USA
	P86	Quantum-Mechanical Simulation of Multiple-Gate MOSFETs A. Godoy, A. Ruiz-Gallardo, C. Sampedro, and F. Gamiz Universidad de Granada, Spain
	P87	Effects of Non Parabolicity in Si Quantum Wires F. Gomez-Campos, S. Rodriguez-Bolivar, and J. Carceller Universidad de Granada, Spain
	P88	Boundary Condition at the Junction M. Harmer, B. Pavlov1, and A. Yafyasov2 Massey University Albany, New Zealand 1The University of Auckland, New Zealand 2St-Petersburg University, Russia
	P89	Time-dependent Carrier Transport in Quantum-dot Array Using NEGF Y. He, D. Hou, X. Liu, G. Du, J. Kang, J. Chen1, and R. Han Peking University, China 1National Institute of Nanotechnology and University of Alberta, Canada
	P90	Investigation of the Nonlinearity Properties of the DC I-V Characteristics of Metal-insulator-metal (MIM) Tunnel Diodes with Double-layer Insulators B. Hegyi, A. Csurgay, and W. Porod1 Peter Pazmany Catholic University, Hungary 1University of Notre Dame, USA
	P91	Interband Tunneling Description of Holes in Wurtzite GaN at High Electric Fields M. Hjelm, A. Martinez1, H. Nilsson, and U. Lindefelt Mid Sweden University, Sweden 1University of Glasgow, United Kingdom
	P92	Control of Fano Resonances and the Transmission Phase of a Multi-terminal Aharanov-Bohm Ring with Three Embedded Quantum Dots E. Hedin, A. Satanin1, and Y. Joe Ball State University, USA 1RAS, Russia
	P93	Indirect Optimal Control of a Qubit H. Jirari and W. Pötz University of Graz, Austria
	P94	Real-Performance Modeling of Carbon Nanotube FETs D. John and D. Pulfrey University of British Columbia, Canada
	P95	VSP - A Multi-Purpose Schrödinger-Poisson Solver for TCAD applications M. Karner, A. Gehring1, S. Holzer, M. Pourfath, M. Wagner, H. Kosina, T. Grasser, and S. Selberherr TU Vienna, Austria 1AMD Saxony, Germany
	P96	Self-consistent Quantum Transport Theory: Applications and Assessment of Approximate Models T. Kubis and P. Vogl TU Munich, Germany
	P97	Fast Inverse using Nested Dissection for the Non Equilibrium Green's Function S. Li and E. Darve Stanford University, USA
	P98	3D Simulation of a Silicon Quantum Dot in a Magnetic Field Based on Current Spin Density Functional Theory M. Lisieri, G. Fiori, and G. Iannaccone University of Pisa, Italy
	P99	Comparing Models of Many-electron Quantum Dynamics M. Lohwasser and N. Mauser University of Vienna, Austria
	P100	Eigenstate Fitting in the k.p Method M. Lopez, A. Chantis1, J. Sune, and X. Cartoixa Universitat Autonoma de Barcelona, Spain 1Arizona State University, USA
	P101	Transport Calculation of Semiconductor Nanowires Coupled to Quantum Well Reservoirs M. Luisier, G. Klimeck1, A. Schenk, and W. Fichtner ETH Zürich, Switzerland 1Purdue University, USA
	P102	Tunneling Enhancement through a Barrier Surrounded by a Mesoscopic Cavity M. Macucci and P. Marconcini University of Pisa, Italy
	P103	Modeling the Inelastic Scattering Effect on the Resonant Tunneling Current B. Majkusiak Warsaw University of Technology, Poland
	P104	Tight-binding and k.p Methods in Carbon Nanotubes: Comparison, Results, and Improvements P. Marconcini and M. Macucci University of Pisa, Italy
	P105	Developing a Full 3D NEGF Simulator with Random Dopant and Interface Roughness A. Martinez, J. Barker, M. Anantram1, A. Svizhenko1, and A. Asenov University of Glasgow, United Kingdom 1NASA Ames Research Center, USA
	P106	Simulation of High-field Magnetotransport in Non-planar 2D Electron Systems G. Meyer and I. Knezevic University of Wisconsin, USA
	P107	Numerical Simulation of Hole Transport in Silicon Nanostructures H. Minari, H. Takeda, M. Okamoto, and N. Mori Osaka University, Japan
	P108	Energy Dispersion Relations for Holes in Silicon Quantum Wells and Quantum Wires V. Mitin, N. Vagidov, M. Luisier1, and G. Klimeck2 University at Buffalo, USA 1ETH Zürich, Switzerland 2Purdue University, USA
	P109	Simulation of the Rashba Effect in a Multiband Quantum Structure O. Morandi and L. Demeio1 University of Florence, Italy 1Universita Politecnica delle Marche, Italy
	P110	Ultrafast Wigner Transport in Quantum Wires M. Nedjalkov, D. Vasileska1, E. Atanassov2, and V. Palankovski TU Vienna, Austria 1Arizona State University, USA 2Bulgarian Academy of Sciences, Bulgaria
	P111	A Many-particle Quantum-trajectory Approach for Modeling Electron Transport and its Correlations in Nanoscale Devices X. Oriols Universitat Autonoma de Barcelona, Spain
	P112	Computational Study of the Schottky Barrier at the Metal-carbon Nanotube Contact N. Park and S. Hong1 Dankook University, Korea 1Sejong University, Korea
	P113	Tunneling-CNTFETs M. Pourfath, H. Kosina, and S. Selberherr TU Vienna, Austria
	P114	Conductance of Nanowires A. Raichura, M. Stroscio, and M. Dutta University of Illinois at Chicago, USA
	P115	Extension of the R-Sigma Method to Any Order M. Rudan, E. Gnani, S. Reggiani, and G. Baccarani University of Bologna, Italy
	P116	Quantum Simulation of Silicon Nanowire FETs: Ballistic Transport and Corner Effects M. Shin Information and Communications University, Korea
	P117	Quantized Conductance Without Reservoirs: Method of the Nonequilibrium Statistical Operator B. Soree and W. Magnus IMEC, Belgium
	P118	Validity of the Effective Mass Approximation in Silicon and Germanium Inversion Layers J. Van der Steen1, D. Esseni, P. Palestri, and L. Selmi University of Udine, Italy 1University of Twente, The Netherlands
	P119	Simulation of Magnetization Reversal and Domainwall Trapping in Submicron NiFe Wires with Different Wire Geometries E. Varga1, A. Imre, L. Ji, and W. Porod 1University of Notre Dame, USA Pazmany Peter Catholic University, Hungary
	P120	The NEGF Simulation of the RTD Bistability J. Voves, T. Trebicky, and R. Jackiv The Czech Technical University, Czech Republic
	P121	I-V Characteristics and Nonclassical Behavior in Networks of Small Metal Clusters H. Zhang, D. Mautes, and U. Hartmann University of Saarbrücken, Germany
	P122	Perimeter Recombination in Thin Film Solar Cells A. Belghachi University of Bechar, Algeria
	P123	Study of the Light Intensity Threshold for Simulated PIN Photodiode under Proton Radiation M. Cappelletti1, E. Peltzer y Blanc1,2 1Universidad Nacional de La Plata, Argentina 2IFLYSIB, Argentinia
	P124	Determination of Single Mode Condition for Rib Waveguides with Large Cross Section by Finite Element Analysis M. De Laurentis, A. Irace, and G. Breglio Universita degli Studi di Napoli "Federico II", Italy
	P125	Improved Simulation of VCSEL Distributed Bragg Reflectors F. De Leonardis, V. Passaro, and F. Magno Politecnico di Bari, Italy
	P126	Scattering Effect in Optical Microring Resonators F. De Leonardis and V. Passaro Politecnico di Bari, Italy
	P127	Simulation of a High Speed Interferometer Optical Modulator in Polymer Materials F. Dell'Olio, V. Passaro, and F. De Leonardis Politecnico di Bari, Italy
	P128	Blinking of Colloidal Semiconductor Quantum Dots: Blinking Mechanisms M. Dutta, M. Stroscio, and B. West1 University of Illinois at Chicago, USA 1Army Research Office, USA
	P129	Monte Carlo Modeling of the X-Valley Leakage in Quantum Cascade Lasers X. Gao, D. Botez, and I. Knezevic University of Wisconsin Madison, USA
	P130	A Parallel MCTDHF Code for Few-electron Systems with Time-dependent External Field G. Jordan, J. Caillat, V. Putz, C. Ede, and A. Scrinzi TU Vienna, Austria
	P131	Input and Intrinsic Device Modeling of VCSELs K. Minoglou1, E. Kyriakis-Bitzaros1,2, D.Syvridis3, and G. Halkias1 1NCSR Demokritos, Greece 2TEI of Pieraus, Greece 3University of Athens, Greece
	P132	A Two Dimensional Analytical Model for Finger Photodiodes T. Naeve and P. Seegebrecht Christian-Albrechts University, Germany
	P133	Atomistic Modeling of GaN Based Nanowires L. Prokopova, M. Persson, M. Povolotskyi, M. Auf Der Maur, and A. Di Carlo University of Rome Tor Vergarta, Italy
	P134	Plasma Effects in Lateral Schottky Junction Terahertz Detector: Models and Characteristics V. Ryzhii, A. Satou, and M. Shur1 University of Aizu, Japan 1Rensselaer Polytechnic Institute, USA
	P135	New Scales: Properties of Nanostructures in the Femtosecond Regime A. Vernes and P. Weinberger TU Vienna, Austria
	P136	Spontaneous Polarization Effects in Nanoscale Wurtzite Structures T. Yamanaka, M. Dutta, and M. Stroscio University of Illinois at Chicago, USA