Poster Session 1
| P1 | Power-Delay Product in COSMOS Logic Circuits A. Al-Ahmadi and S. Kaya Ohio University, USA |
||
| P2 | A 3D Finite Element Parallel Simulator for Studying Fluctuations in Advanced MOSFETs M. Aldegunde, A. Garcia-Loureiro, K. Kalna1, and A. Asenov1 University of Santiago de Compostela, Spain 1University of Glasgow, United Kingdom |
||
| P3 | Calibration of the Density-Gradient Model by Using the Multidimensional Effective-mass Schrödinger Equation P. Andrei Florida State University and Florida AM University, USA |
||
| P4 | Random Dopant Fluctuation Analysis for Scaling Multi-Gate Device Structures Y. Ashizawa, R. Tanabe, and H. Oka Fujitsu Laboratories, Japan |
||
| P5 | Study of Piezoresistivity Effect in FET M. Auf der Maur, M. Povolotskyi, F. Sacconi, and A. Di Carlo University of Rome Tor Vergata, Italy |
||
| P6 | Influences of Grain Structure on Thermally Induced Stresses in 3D-IC Inter-wafer Vias D. Bentz, M. Bloomfield, J.-Q Lu, R. Gutmann, and T. Cale Rensselaer Polytechnic Institute, USA |
||
| P7 | TCAD-Assisted Development of Technology-Independent Device Models P. Blakey, S. Bates, and U. Yahya Northern Arizona University, USA |
||
| P8 | Intrinsic Parameter Fluctuations due to Random Grain Orientations in High-k Gate Stacks A. Brown, J. Watling, and A. Asenov University of Glasgow, United Kingdom |
||
| P9 | Gummel Iterations for Inverse Dopant Profiling of Semiconductor Devices M. Burger Johannes Kepler University, Austria |
||
| P10 | An Evolution Algorithm for Noise Modeling of HEMT's down to Cryogenic Temperatures A. Caddemi, F. Catalfamo, and N. Donato University of Messina, Italy |
||
| P11 | Combined Line-Width-Roughness (LWR) and Local Critical Dimension (CD) Variation Effects on Sub-65nm MOSFET Current-Voltage Characteristics: From Lithography to Metrology to Device Simulation V. Constantoudis, G. Patsis, and E. Gogolides NCSR Demokritos, Greece |
||
| P12 | TCAD Simulation of OTFT Small-Signal Parameters C. Erlen, P. Lugli, B. Nickel1, and M. Fiebig1 TU Munich, Germany 1LMU Munich, Germany |
||
| P13 | Semiconductor Transport Modeling for the Analysis of Nanoscaled CMOS Circuits F. Felgenhauer, M. Begoin, J. Bremer, and W. Mathis University of Hannover, Germany |
||
| P14 | A Novel Framework for Distributing Computations T. Fühner, S. Popp1, and T. Jung Fraunhofer IISB, Germany 1University of Applied Science Regensburg, Germany |
||
| P15 | Efficient Full-Flow Process Simulation for 3D Structures including Stress Modeling A. Gencer, A. Lebedev1, and P. Pfäffli1 Synopsys, Germany 1Synopsys, Switzerland |
||
| P16 | Simulation of Slow Current Transients and Current Compression in AlGaAs/GaAs HFETs H. Ikarashi, K. Kitamura, N. Kurosawa, and K. Horio Shibaura Institute of Technology, Japan |
||
| P17 | Compact Model for Schottky-barrier CNT-FETs D. Jimenez, X. Cartoixa, E. Miranda, J. Sune, and S. Roche1 Universitat Autonoma de Barcelona, Spain 1Commisariat a l' Energie Atomique, France |
||
| P18 | A Simulation-Based Evolutionary Technique for Inverse Problems of Sub-65nm CMOS Devices Y. Li, S.-M. Yu, and C.-K. Chen National Chiao Tung University, Taiwan |
||
| P19 | Numerical Simulation of Electrical Characteristics on Uniaxial Strained Bulk and SOI FinFETs Y. Li and W.-H. Chen National Chiao Tung University, Taiwan |
||
| P20 | Strain Engineering with Si1-yCy Source and Drain Stressors C. Maiti and A. Saha IIT Kharagpur, India |
||
| P21 | Hot Electron Distribution Function for the Boltzmann Equation with Analytic Bands O. Muscato University of Catania, Italy |
||
| P22 | Computer Simulation Experiment on Prospects of ZnS as Novel Material for High mm-Wave Power/Low Noise Generation in Impatt Mode S. Pati and P. Tripathy Sambalpur University, India |
||
| P23 | Accurate Extraction of Maximum Current Densities from the Layout A. Seidl, T. Schnattinger1, A. Erdmann1, H. Hartmann2, and A. Petrashenko2 Hochschule Magdeburg-Stendal, Germany 1Fraunhofer IISB, Germany 2Software and System Solutions GbR, Germany |
||
| P24 | A 3D Parallel Simulation of the Effect of Interface Charge Fluctuations in HEMTs N. Seoane, A. Garcia-Loureiro, K. Kalna1, and A. Asenov1 University of Santiago de Compostela, Spain 1University of Glasgow, United Kingdom |
||
| P25 | Negative Gate-Overlap in Nanoscaled DG-MOSFETs with Asymmetric Gate Bias X. Shao and Z. Yu Tsinghua University, China |
||
| P26 | Human Body Model ESD Simulation Including Self Heating Effect T. Takani and T. Toyabe Toyo University, Japan |
||
| P27 | Quantum Correction for DG MOSFETs M. Wagner, M. Karner, T. Grasser, and H. Kosina TU Vienna, Austria |
||
| P28 | Weak Accumulation of Gate Polysilicon H. Watanabe, K. Matsuo, T. Kobayashi, K. Nakajima, and T. Saitoh Toshiba Corporation, Japan |
||
| P29 | Numerical Analysis of a DAR IMPATT Diode A. Zemliak and S. Cabrera Puebla Autonomous University, Mexico |
||
| P30 | Meshless Solution of the 3-D Semiconductor Poisson Equation Z. Aksamija and U. Ravaioli University of Illinois at Urbana, USA |
||
| P31 | Particle-based Simulations of Phonon Transport in Silicon A. Asokan and R. Kelsall University of Leeds, United Kingdom |
||
| P32 | Neutral and Negatively Charged Interstitial Oxygen in Silicon P. Ballo, D. Donoval, and L. Harmatha Slovak University of Technology, Slovakia |
||
| P33 | Model Plasma Dispersion Functions for SO Phonon Scattering in Monte Carlo Simulations of High-k Dielectric MOSFETS J. Barker and J. Watling University of Glasgow, United Kingdom |
||
| P34 | On a Simple and Accurate Quantum Correction for Monte Carlo Simulation F. Bufler1, R. Hude, and A. Erlebach ETHZ Integrated Systems Laboratory, Switzerland 1Synopsys Schweiz GmbH, Switzerland |
||
| P35 | DSMC versus WENO-BTE: A Double Gate MOSFET Example M. Caceres, J. Carrillo1, I. Gamba2, A. Majorana3, and C.-W. Shu4 Universidad de Granada, Spain 1Universitat Autonoma de Barcelona, Italy 2University of Texas at Austin, USA 3University of Catania, Italy 4Brown University, USA |
||
| P36 | Electronic Noise in Semiconductor Systems: A Monte Carlo Simulation under Mixed Fields M. Capizzo, D. Persano Adorno, and M. Zarcone University of Palermo, Italy |
||
| P37 | Thermal Noise in Nanometric DG-MOSFET P. Dollfus, A. Bournel, and J. Velazquez1 Universite Paris-Sud, France 1Universidad de Salamanca, Spain |
||
| P38 | Full-band Particle-based Simulation of 85 nm AlInSb/InSb Quantum Well Transistors N. Faralli, J. Branlard, S. Goodnick1, D. Ferry1, and M. Saraniti Illinois Institute of Technology, USA 1Arizona State University, USA |
||
| P39 | On the Impact of High-k Gate Stacks on Mobility: A Monte Carlo Study Including Coupled SO Phonon-plasmon Scattering G. Ferrari, J. Watling, S. Roy, J. Barker, P. Zeitoff1, G. Bersuker1, and A. Asenov University of Glasgow, United Kingdom 1SEMATECH, USA |
||
| P40 | Electron Injection Model for the Particle-simulation of 3D, 2D and 1D Nanoscale FET E. Fernandez-Diaz and X. Oriols Universitat Autonoma de Barcelona, Spain |
||
| P41 | Free-carrier Grating due to the Optical Phonon Emission in InP n+nn+ Structures V. Gruzinskis, E. Starikov, and P. Shiktorov Semiconductor Physics Institite, Lithuania |
||
| P42 | 3D Monte-Carlo Device Simulations Using an Effective Quantum Potential Including Electron-Electron Interactions C. Heitzinger, C. Ringhofer, S. Ahmed, and D. Vasileska Arizona State University, USA |
||
| P43 | Pearson versus Gaussian Effective Potentials for Quantum Corrected Monte-Carlo Simulation M. Jaud1,2,3, S. Barraud1, P. Dollfus3, H. Jaouen2, and G. Le Carval1 1CEA-LETI, France 2STMicroelectronics, France 3CNRS-UPS, France |
||
| P44 | Atomistic Modeling for Boron Up-hill Diffusion After Ge Pre-amorphization J.-S. Kim and T. Won Inha University, Korea |
||
| P45 | Threshold Energy and Impact Ionization Scattering Rate Calculations for Strained Silicon C. May1,2 and F. Bufler2,3 1ETH Zürich, Switzerland 2University of Tuebingen, Germany 3Synopsys Schweiz GmbH, Switzerland |
||
| P46 | Monte Carlo Calculation of Voltage-Current Nonlinearity and High-Order Harmonic Generation in GaAs Microstructures D. Persano Adorno, M. Capizzo, and M. Zarcone University of Palermo, Italy |
||
| P47 | Static-Electric-Field Effects on Harmonic Generation in Gallium Arsenide Bulk Exposed to Intense Sub-THz Radiation D. Persano Adorno, M. Zarcone, and G. Ferrante University of Palermo, Italy |
||
| P48 | Transport in Silicon Nanowires: Surface Roughness and Confined Phonons E. Ramayya, D.Vasileska1, S. Goodnick1, and I. Knezevic University of Wisconsin at Madison, USA 1Arizona State University, USA |
||
| P49 | Electrothermal Monte Carlo Simulation of Submicron Wurtzite GaN/AlGaN HEMTs T. Sadi, R. Kelsall, and N. Pilgrim1 University of Leeds, United Kingdom 1University of Aberdeen, United Kingdom |
||
| P50 | Quantum Ensemble Monte Carlo Simulation of Silicon-based Nanodevices C. Sampedro, F. Gamiz, A. Godoy, and F. Jimenez-Molinoz Universidad de Granada, Spain |
||
| P51 | Monte Carlo Simulation of 2D TASER E. Starikov, P. Shiktorov, V. Gruzinskis, A. Dubinov1, V. Aleshkin1, L. Varani2, C. Palermo2, and L. Reggiani3 Semiconductor Physics Institute, Lithuania 1Institute for Physics of Microstructures, Russia 2CEM2, France 3INFM-National Nanotechnology Laboratory, Italy |
||
| P52 | Analysis of Nano-Scale MOSFET Including Uniaxial and Biaxial Strain R. Tanabe, T. Yamasaki, Y. Ashizawa, and H. Oka Fujitsu Laboratories, Japan |
||
| P53 | Study of the Cutoff Frequency of Optimized SOI MESFETs K. Tarik, D. Vasileska, and T. Thornton Arizona State University, USA |
||
| P54 | Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon E. Ungersböck, S. Dhar, G. Karlowatz, H. Kosina, and S. Selberherr TU Vienna, Austria |
||
| P55 | Simulation of Tri-Gate MOSFET Using 3D Monte Carlo Method Based on the Quantum Boltzmann Equation J. Wang, Z. Xia, G. Du, X. Liu, and R. Han Peking University, China |
||
| P56 | Electron Transport in Self-Switching Nano-Diode K.-Y. Xu, A.-M Song1, and G. Wang Sun Yat-sen University, China 1University of Manchester, United Kingdom |
||
| P57 | Molecular Dynamic Simulation on Boron Cluster Implantation for Shallow Junction Formation L. Yuan, W. Li, M. Yu, H. Ji, K. Zhan, R. Huang, X. Zhang, Y. Wang, J. Zhang1, and H. Oka2 Peking University, China 1Fujitsu RD Center, China 2Fujitsu Laboratories, Japan |
||
| P58 | Physical Modeling of Hole Mobility in Silicon Inversion Layers under Uniaxial Stress J. Zhao, J. Zou, and Z. Yu Tsinghua University, China |
||
| P59 | Reduced Backscattering in Potassium Doped Nanotubes C. Adessi, S. Roche1,2, and X. Blase Universite Claude Bernard Lyon, France 1CEA-DSM, France 2CEA-DRT, France |
||
| P60 | Scaling Of Molecular Electronics Devices A. Boudjella1,2,3 and K. Mokhtar4 1Queen's College, Canada 2Alpha Toronto, Canada 3Conseil Scolaire de District du centre-Sud-ouest, Canada 4Honeywell-Engines, Canada |
||
| P61 | Computation of the I-V Characteristics of a Molecular Switch I. Cacelli1, A. Ferretti2, M. Girlanda1,2, and M. Macucci1 1University of Pisa, Italy 2CNR, Italy |
||
| P62 | Simulations of Correlated Electronic Transport Across Molecular Junctions G. Fagas, P. Delaney1, and J. Greer Tyndall National Institute, Ireland 1Queen's University Belfast, Ireland |
||
| P63 | Numerical Simulation of Organic Field-Effect-Transistors W. Klix, R. Stenzel, T. Herrmann, and E. Mehler University of Applied Sciences Dresden, Germany |
||
| P64 | Percolation Current in Organic Semiconductors L. Li, G. Meller, and H. Kosina TU Vienna, Austria |
||
| P65 | Ferromagnetism in Tetrahedrally Coordinated Compounds of I/II-V Elements: Ab Initio Calculations M. Sieberer, J. Redinger, S. Khmelevskyi, and P. Mohn TU Vienna, Austria |
||
| P66 | Ab-initio Calculations for Indium Migration in Silicon Substrate K.-S. Yoon, C.-O. Hwang1, and T. Won Inha University, Korea 1Soongsil University, Korea |
||
| P67 | Electrostatic Modeling of Ion Motive Sodium Pump J. Fonseca, R. Rakowski, and S. Kaya Ohio University, USA |
||
| P68 | Numerical Aspects of the Three-Dimensional Feature-Scale Simulation of Silicon-Nanowire Field-Effect Sensors for DNA Detection C. Heitzinger and G. Klimeck Purdue University, USA |
||
| P69 | Shot Noise in Single Open Ion Channels: A Computational Approach Based on Atomistic Simulations E. Piccinini, R. Brunetti, F. Affinito, C. Jacoboni, and M. Rudan1 University of Modena, Italy 1University |
