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IWCE-13 Abstracts (2009)

Z. Aksamija, M.Y. Mohamed, U. Ravaioli:
"Parallel Implementation of Boltzmann Transport Simulation of Carbon Nanotubes";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
A. Ashok, D. Vasileska, S.M. Goodnick, O. Hartin:
"Bias Induced Strain Effects, Short-Range Electron - Electron Interactions and Quantum Effects in AlGaN/GaN HEMTs";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
M. Auf der Maur, M. Povolotskyi, F. Sacconi, G. Romano, G. Penazzi, A. Pecchia, A. Di Carlo:
"Multiscale-Multiphysics Simulation of Nanostructured Devices: the TiberCAD Project";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
J. Ayubi-Moak, R. Akis, M. Saraniti, D.K. Ferry, S.M. Goodnick:
"Physical Modeling of Microwave Transistors Using a Full-Band/Full-Wave Simulation Approach";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina:
"Numerical Quadrature of the Subband Distribution Functions in Strained Silicon UTB Devices";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
M. Bescond, M. Lannoo, L. Raymond, F. Michelini, M.G. Pala:
"Influence of Ionized Impurities in Silicon Nanowire MOS Transistors";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
C. Buran, M.G. Pala, M. Mouis, S. Poli:
"Full-3D Real-Space Simulation of Surface-Roughness Effects in Double-Gate MOSFETs";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
Z. Chen, J. Zhang, Z. Yu:
"AC Small-Signal Response of Graphene Nanoribbons";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
Y. Cheng, I.M. Gamba, A. Majorana, S. Chi-Wang:
"A Discontinuous Galerkin Solver for Full-Band Boltzmann-Poisson Models";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
G.-S. Choe, J.-M. Woo, Y.-J. Park, Y.W. Chang, J. Oh, K.-H. Yoo:
"Numerical Simulation of a DNA Sensor Based on the CNT-Gold Island Structure";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
N. Dehdashti, A. Afzalian, C.-W. Lee, R. Yan, G. Fagas, J.-P. Colinge:
"Device Characteristics of Trigate-FET with Barrier Constrictions in the Channel";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
G. Fiori, G. Iannaccone:
"Performance Analysis of Graphene Bilayer Transistors Through Tight-Binding Simulations";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
M.V. Fischetti, S. Jin, T.-W. Tang, P. Asbeck, Y. Taur, S.E. Laux, N. Sano:
"Scaling MOSFETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
M. Frey, A. Esposito, A. Schenk:
"Boundary Conditions for Incoherent Quantum Transport";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
B. Fu, M.V. Fischetti:
"Dissipative Quantum Transport using the Pauli Master Equation";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
D. Fu, R. Zhang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards:
"Strain- and Compositional Modulation of the Near-Band-Edge Band Structures of AlN and Its Ternary Alloys with GaN and InN";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
N. Fuentes, A. Parra, E. Oltra, J.M. Cuerva, S. Rodriguez-Bolivar, F. Gomez-Campos, J.A. Lopez-Villanueva, J.E. Carcellar, E. Bunuel, D.J. Cardenas:
"Computational Study of a Nanofuse Based on Organic Molecules";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
A. Gagliardi, M. Auf der Maur, A. Pecchia, A. Di Carlo:
"Dye Solar Cell Simulations Using Finite Element Method";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, G. Baccarani:
"Mode Space Approach for Tight-Binding Transport Simulation in Graphene Nanoribbon FETs";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
Y. He, J. Zhang, M. Zhang, Y. Wang, Z. Yu:
"Chemical Bonding and Schottky Barrier for Metal-Carbon Nanotube Contacts";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
A. Heigl, A. Schenk, G. Wachutka:
"Correction to the Schenk Model of Band-to-Band Tunneling in Silicon Applied to the Simulation of Nanowire Tunneling Transistors";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
C.-I. Huang, Y.-R. Wu, I.-C. Cheng, J.Z. Chen, K.-C. Chiu, T.-S. Lin:
"Mobility Study of Polycrystalline MgZnO/ZnO Thin Film Layers with Monte Carlo Method";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
S. Ito, T. Maruizumi, Y. Suwa:
"Stable Position of B12 Cluster Near Si (001) Surface and Its STM Images";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
S. Jin, T.-W. Tang, M.V. Fischetti:
"Anatomy of Carrier Backscattering in Silicon Nanowire Transistors";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
J. Kim, M.V. Fischetti:
"Empirical Pseudopotential Calculation of Band Structure and Deformation Potentials of Biaxially Strained Semiconductors";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
G. Klimeck, D. Vasileska:
"ABACUS and AQME: Semiconductor Device and Quantum Mechanics Education on nanoHUB.org";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
K.J. Kuhn:
"Moore's Law Past 32nm: Future Challenges in Device Scaling";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 6.
O. Kurniawan, P. Bai, E.P. Li:
"Non-Equilibrium Green's Function Calculation of Optical Absorption in Nano Optoelectronic Devices";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
K.-T. Lam, G. Liang:
"Computational Study on the Performance Comparison of Monolayer and Bilayer Zigzag Graphene Nanoribbon FETs";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 3.
S.E. Laux:
"Computation of Complex Band Structures in Bulk and Confined Structures";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
S. Lee, H. Ryu, Z. Jiang, G. Klimeck:
"Million Atom Electronic Structure and Device Calculations on Peta-Scale Computers";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
Z.-Y. Leong, K.-T. Lam, G. Liang:
"Device Performance of Graphene Nanoribbon Field Effect Transistors with Edge Roughness Effects: A Computational Study";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
C. Li, M. Bescond, M. Lannoo:
"Correlation Effects in Silicon Nanowire MOSFETs";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
C.-K. Li, Y.-R. Wu, J. Singh:
"Modeling of Junction Temperature and Current Flow in High Power InGaN/GaN Light Emission Diodes Using Finite Element Methods";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
M. Li, R. Zhang, W.S. Yan, B. Liu, F. Deyi, C.Z. Zhao, Z.L. Xie, X.Q. Xiu, Y.D. Zheng:
"Effect of Doping Concentration and Barrier Thickness on Rashba Spin Splitting in Al0.5Ga0.5N/GaN Heterostructures";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
S. Li, E. Darve:
"Optimization of the FIND Algorithm to Compute the Inverse of a Sparse Matrix";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
G. Liang, H. Teong, K.-T. Lam:
"Computational Study of Graphene Nanoribbon Resonant Tunneling Diodes";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 3.
T. Lu, G. Du, H. Jiang, X. Liu, P. Zhang:
"Multi Subband Deterministic Simulation of an Ultra-thin Double Gate MOSFET with 2D Electron Gas";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
T.K. Maiti, C.K. Maiti:
"Charge-based Mobility Modeling for Organic Semiconductors";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
P. Marconcini, G. Fiori, A. Ferretti, G. Iannaccone, M. Macucci:
"Numerical Analysis of Transport Properties of Boron-Doped Graphene FETs";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
G. Milovanovic, H. Kosina:
"Nonparabolicity Effects in Quantum Cascade Lasers";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
V. Mitin, A. Sergeev, L.-H. Chien, N. Vagidov:
"Monte-Carlo Modeling of Photoelectron Kinetics in Quantum-Dot Photodetectors";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
N. Neophytou, H. Kosina, T. Rakshit:
"Quantum Transport Simulations of InGaAs HEMTs: Influence of Mass Variations on the Device Performance";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 3.
H.-N. Nguyen, D. Querlioz, S. Galdin-Retailleau, A. Bournel, P. Dollfus:
"Wigner Monte Carlo Simulation of CNTFET: Comparison Between Semi-Classical and Quantum Transport";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
Y.M. Niquet, A. Lherbier, M.P. Persson, F. Triozon, S. Roche, X. Blase, D. Rideau:
"Atomistic Tight-Binding Approaches to Quantum Transport";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
T. Osotchan, S. Pengmanayol:
"Effect of Defect Sites in Charge Carrier Mobility Enhancement of Hopping Model";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
G. Patton:
"Semiconductor Technology-Trends, Challenges and Opportunities";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
A. Paul, S. Mehrotra, G. Klimeck, M. Luisier:
"On the Validity of the Top of the Barrier Quantum Transport Model for Ballistic Nanowire MOSFETs";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
G. Penazzi, A. Pecchia, F. Sacconi, M. Auf der Maur, M. Povolotskyi, G. Romano, A. Di Carlo:
"Simulations of Optical Properties of a GaN Quantum Dot Embedded in a AlGaN Nanocolumn within a Mixed FEM/atomistic Method";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
A.T. Pham, C. Jungemann, B. Meinerzhagen:
"Simulation of Mobility Variation and Drift Velocity Enhancement Due to Uniaxial Stress Combined with Biaxial Strain in Si PMOS";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
J. Qian, S. Liao, M.A. Stroscio, M. Dutta, S. Xu:
"Electrical Transport through Single DNA Molecules by Distinct Tip-Surface Configurations";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 3.
D. Querlioz, J. Saint-Martin, P. Dollfus:
"Decoherence Due to Electron-Phonon Scattering in Semiconductor Nanodevices";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
E. Ramayya, I. Knezevic:
"Ultrascaled Silicon Nanowires as Efficient Thermoelectric Materials";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
Q. Ran, M. Gao, Y. Wang, Z. Yu:
"First-Principles Study of the Potential Step in Metal/Graphene Contact";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
H. Raza, E.C. Kan:
"Stacking Misalignments in Bilayer Graphene";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
N. Rizos, M. Omar, P. Lugli, G. Csaba, M. Becherer, D. Schmitt-Landsiedel:
"Clocking Schemes for Field Coupled Devices from Magnetic Multilayers";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
R. Roloff, M. Wenin, W. Potz:
"Optimization Algorithms for Josephson Qubits";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 2.
H. Ryu, S. Lee, G. Klimeck:
"A Study of Temperature-dependent Properties of N-type d-doped Si Band-structures in Equilibrium";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
A. Satou, V. Ryzhii, N. Vagidov, V. Mitin:
"Numerical Simulation of Plasma Waves in High-Electron-Mobility Transistors Using Kinetic Transport Model";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 3.
P. Schwaha, O. Baumgartner, R. Heinzl, M. Nedjalkov, S. Selberherr, I. Dimov:
"Classical Approximation of the Scattering Induced Wigner Correction Equation";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
J.T. Shaw, H. Tuo-Hung, H. Raza, E.C. Kan:
"3D Finite-Element Analysis of Metal Nanocrystal Memories Variations";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
Y. Sheng, Y.G. Xiao, Y.J. Zhou, M. Lestrade, Z.Q. Li, Z.M.S. Li:
"Simulation on Crystalline Silicon Solar Cell with Laser-fired Contact (LFC)";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
M. Shin:
"NEGF Simulation of Nanowire Field Effect Transistors Using the Eight-band k · p method";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
F. Shoushan:
"CNT Research: from Academic Wonder to Industrial Exploration";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
I. Solovyev:
"Realistic Modeling of Complex Oxide Materials from the First Principles";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
S. Souma, M. Ogawa, T. Yamamoto, K. Watanabe:
"Simulation of Graphene Nanoribbon Spin-Filter Device with Spin-Density Functional Tight-Binding Method";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
S. Steiger, R. Veprek, B. Witzigmann:
"Electroluminescence from a Quantum-Well LED using NEGF";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
M. Stettler, R. Kotlyar, T. Rakshit, T. Linton:
"Device Simulation for Future Technologies";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
V. Sverdlov, O. Baumgartner, H. Kosina, S. Selberherr, F. Schanovsky, D. Esseni:
"The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface Layers";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
I.M. Tienda-Luna, F.G Ruiz, A. Godoy, F. Gamiz:
"Effect of Arbitrary Orientation and Strain on Surrounding Gate Transistors";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
F.J. Twaddle, D.R.S. Cumming, S. Roy, A. Asenov, T.D. Drysdale:
"RC Variability of Short-Range Interconnects";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 3.
S. Tyaginov, V. Sverdlov, W. Gös, T. Grasser:
"Statistics of Si-O Bond-Breakage Rate Variations Induced by O-Si-O Angle Fluctuations";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
M. Usman, H. Ryu, S. Lee, Y.H. Tan, G. Klimeck:
"Quantum Confined Stark Shift and Ground State Optical Transition Rate in [100] Laterally Biased InAs/GaAs Quantum Dots";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
A. Valentin, S. Galdin-Retailleau, P. Dollfus:
"Sequential Transport in a Two-Dot Device";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
M. Van Schilfgaarde, T. Kotani:
"Towards ab initio Device Design: The Quasiparticle Self-Consistent GW Approximation";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 2.
D. Vasileska, S.M. Goodnick, K. Raleva:
"Self-Consistent Simulation of Heating Effects in Nanoscale Devices";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
K.J. Willis, S.C. Hagness, I. Knezevic:
"A Global EMC-FDTD Simulation Tool for High-Frequency Carrier Transport in Semiconductors";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
T. Windbacher, V. Sverdlov, S. Selberherr:
"Modeling of Low Concentrated Buffer DNA Detection with Suspend Gate Field-Effect Transistors (SGFET)";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
H. Xu, Y. He, Y. Zhao, G. Du, J. Kang, R. Han, X. Liu, C. Fan:
"Radial Boundary Forces-Modulated Valence Band Structure of Ge (110) Nanowire";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
M. Yu, Q. Li, J. Yang, Y. Qiao, J. Wang, R. Huang, X. Zhang:
"Simulation on Low Energy Ion Implantation into Ge and SiGe With Molecular Dynamics Method";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
L. Zeng, X.-Y. Liu, G. Du, J.F. Kang, R.Q. Han:
"A Monte Carlo Study of Ambipolar Schottky Barrier MOSFETs";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
D. Zhang, E. Polizzi:
"Mode Decomposition Techniques for Electronic Structure Calculations of 3D Nanowire Devices";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
J. Zhang, S. Patil:
"Development of Coupled Thermo-Electrical-Mechanical Models for Studying Degradation of AlGaN/GaN HFETs";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
W. Zhang, G. Du, Q. Li, A. Zhang, Z. Mo, X. Liu, P. Zhang:
"A 3D Parallel Monte Carlo Simulator for Semiconductor Devices";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.
Y. Zhang, M.V. Fischetti:
"Calculation of Hole Mobility in Ge and III-V p-Channels";
Poster: Conference, Beijing, China; 05-27-2009 - 05-29-2009; in: "Proc. of IWCE", (2009), 1 - 4.