| IWCE 2010 - MOS Devices |
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| Written by Administrator |
| Wednesday, 01 February 2012 09:38 |
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MOS DEVICES session (Oct. 29th, 2010, 11:15 AM to 1:00 PM) N. Cavassilas, M. Bescond, F. Michelini: Phonon-induced transverse-mode coupling in double-gate transistor D. Garetto, Y. M. Randriamihaja, D. Rideau, E. Dornel, W. F. Clark, A. Schmid, V. Huard, H. Jaouen, Y. Leblebici: Small signal analysis of electrically-stressed oxides with PS-based multiphonon capture model A. T. Pham, C. Jungemann, B. Meinerzhagen: Simulation of Landau quantization effects due to strong magnetic fields in (110) Si hole inversion layers M. Shin: Quantum Transport in Nanowire p-type Schottky Barrier MOSFETs with the k.p Method |
| Last Updated ( Wednesday, 01 February 2012 11:34 ) |