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| IWCE 2010 - Numerical Simulation of Semiconductor Properties |
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| Written by Administrator |
| Monday, 30 January 2012 13:18 |
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NUMERICAL SIMULATION OF SEMICONDUCTOR PROPERTIES session (Oct. 28th, 2010, 11:45 AM to 13:00 AM) E. Bellotti, M. Moresco, F. Bertazzi: Theory of High Field Transport and Impact Ionization in III-Nitride Semiconductors (invited) K. J. Willis, S. C. Hagness, I. Knezevic: EMC/FDTD/MD for Multiphysics Characterization of Semiconductors at THz Frequencies M. Totaro, P. Marconcini, M. Macucci: Ionized donor reordering in typical heterostructures F. Bertazzi, M. Goano, E. Bellotti: Auger lifetime in narrow gap semiconductors |
| Last Updated ( Wednesday, 01 February 2012 11:33 ) |