| Invited speaker | Institution | Main Topics | |
| Aldo Di Carlo | University of Rome "Tor Vergata", Italy | "Multiscale-multiphysics simulation of nanostructured devices: The Tibercad Project" | |
| Shoushan Fan | Tsinghua University, Fellow of Chinese Academy of Sciences , China | "CNT Research: from Academic Wonder to Industrial Exploration" | |
| Massimo Fischetti | University of Massachusetts, USA | "Scaling to 10nm: Coulomb effects, source starvation, and the virtual source" | |
| Matthew Gilbert | University of Illinois at Urbana-Champaign, USA | "On the calculation of room temperature correlated interlayer transport in bilayer heterojunction systems" | |
| Kelin Kuhn | Fellow, Intel, USA | "Moore's law past 32nm: future challenges in device scaling" | |
| Mark Lundstrom | Purdue University, USA | "Revisiting the scattering model of the MOSFET" | |
| Yann Michel Niquet | CEA/DRFMC, CNRS, Grenoble , France | "Atomistic tight-binding approaches to quantum transport" | |
| Gary Patton | VP, Semiconductor R&D Center, IBM , USA | "Semiconductor Technology - Trends, Challenges and Opportunities" | |
| Mark van Schilfgaarde | Arizona State University, USA | "Ab initio electronics structure calculation" | |
| Jasprit Singh | University of Michigan, USA | "Challenges in simulations of nitride heterostructure transistors and light emitters" | |
| Igor Solovyev | National Institute for Materials Science , Japan | "Realistic modeling of complex oxide materials from the first principles" | |
| Mark Stettler | Intel, USA | "Device simulation for future technologies" |